Κατασκευαστής: 8878
Κωδικός Προϊόντος: xr2725
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low..
4,20€
Κατασκευαστής: 7832
Κωδικός Προϊόντος: xr2723
F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A..
4,20€
Κατασκευαστής: 6900
Κωδικός Προϊόντος: xr2713
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to rep..
4,20€
Κατασκευαστής: 6676AS
Κωδικός Προϊόντος: xr2721
FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate char..
4,20€
Κατασκευαστής: 6675
Κωδικός Προϊόντος: xr2740
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A @ VGS = -4.5V, RDS(on) = 21.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state r..
4,20€
Κατασκευαστής: 4924
Κωδικός Προϊόντος: xr2728
AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converte..
4,20€
Κατασκευαστής: 4914
Κωδικός Προϊόντος: xr2745
Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID = 7.4A @ VGS = 4.5V, RDS(on) = 27mΩChannel-2VDS = 30VID = 8A @ VGS = 10V, RDS(on) = 20mΩID = 8A @ VGS = 4.5V, RDS(on) = 25mΩShottky Product SummaryVDS = 30VIF = 2AVSD = 0.5V @ 1A..
4,20€
Κατασκευαστής: 4856
Κωδικός Προϊόντος: xr2699
N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω..
4,20€
Κατασκευαστής: 4704
Κωδικός Προϊόντος: xr2726
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM application..
4,20€
Κατασκευαστής: 4606
Κωδικός Προϊόντος: xr2709
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other appl..
4,20€
Κατασκευαστής: 4511
Κωδικός Προϊόντος: xr2702
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A..
4,20€
Κατασκευαστής: 4496
Κωδικός Προϊόντος: xr2708
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application...
4,20€